| PART |
Description |
Maker |
| IRFB5620PBF IRFB5620PBF-15 |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| IRFB5615PBF |
DIGITAL AUDIO MOSFET
Key Parameters Optimized for Class-D Audio Amplifier Applications
|
International Rectifier
|
| IDP08E65D1 |
High Power RF LDMOS FETs
Temperature stable behaviour of key parameters
|
Infineon Technologies AG
Infineon Technologies A...
|
| MR18R1628EG0-CM8 MR16R1628EG0-CK8 MR16R162GEG0-CK8 |
From old datasheet system
CONN HEADER 20POS DL PCB 30GOLD
Key Timing Parameters 关键的定时参
CONN HEADER 18POS DL PCB 30GOLD 关键的定时参
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MM74C922 MM74C923 MM74C923WMX MM74C922WMX MM74C922 |
16-Key Encoder 20-Key Encoder
16-Key Encoder ?20-Key Encoder
16-Key Encoder • 20-Key Encoder
From old datasheet system
|
Fairchild Semiconductor
|
| RLDH660-40-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| RLDB808-500-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI7415DN-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI6968BEDQRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-108TC |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI7136DP-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
