| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| AP15P15GM-HF AP15P15GM-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2.7 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
Advanced Power Electronics Corp.
Advanced Power Electronics, Corp.
|
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| ARF448B ARF448A ARF448 |
N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AP25P15GS-HF AP25P15GS-HF14 |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics Corp.
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MTP6N60 3038 -MTP6N60 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB5NA80 4891 |
N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APL501J |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm
|
Advanced Power Technology Ltd.
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
