| PART |
Description |
Maker |
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MUX08 MUX08BRC_883 MUX08S MUX-08 MUX-08AQ MUX-08BQ |
JFET SWITCH RATHER THAN CMOS
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
ID ISC.LRMU1000-A-FCC UHF READER
Tools, Tips Soldering; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected)
8-Channel Analog Multiplexer
4-Channel Analog Multiplexer
8-Chan/dual 4-Chan JFET Analog Multiplexers(Overvoltage & Power Supply loss Protected)
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| MUX08EP MUX08FP |
8-Chan/Dual 4-Chan JFET Analog Multiplexers (Overvoltage & Power Supply Loss Protected) 8-CHANNEL, SGL ENDED MULTIPLEXER, PDIP16
|
Analog Devices, Inc.
|
| 42S16800A IS42S81600A IS42S16800A IS42S32400A IS42 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
CABLE ASSEMBLY; BNC MALE TO BNC FEMALE BULKHEAD; 50 OHM, RG174A/U COAX; ; *USES STANDARD 50 OHM INTERFACE CONNECTORS* 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PDSO86
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 4M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO86
|
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| RPS0250DL43R0GBZA3 RPS0250DLR430GBZA3 |
RESISTOR, METAL GLAZE/THICK FILM, 250 W, 2 %, 150 ppm, 43 ohm, CHASSIS MOUNT ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 250 W, 2 %, 250 ppm, 0.43 ohm, CHASSIS MOUNT ROHS COMPLIANT
|
Vishay Intertechnology, Inc.
|
| IRF614J69Z |
2.8 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SIHFI634G |
5.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| IPD600N25N3G |
25 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
INFINEON TECHNOLOGIES AG
|
| STF17NF25 |
17 A, 250 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
STMICROELECTRONICS
|
| RFP6N50 RFM6N45 RFP6N45 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
|
