| PART |
Description |
Maker |
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
New Jersey Semi-Conductor P...
|
| FRF150R FRF150D FRF150H |
25A/ 100V/ 0.07 Ohm/ Rad Hard/ N-Channel Power MOSFETs
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| SBR250-10J |
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 25A Rectifier
|
Sanyo Semicon Device
|
| FSF150D FSF150R |
25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
25A/ 100V/ 0.070 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil Corporation
|
| BYP54-800 BYP53 BYP53-100 BYP53-150 BYP53-200 BYP5 |
25A Silicon Power Rectifier Diode 25 A, 800 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 500 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 75 V, SILICON, RECTIFIER DIODE
25A Silicon Power Rectifier Diode 25 A, 150 V, SILICON, RECTIFIER DIODE
25 A, 75 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 150 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 700 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 200 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
25 A, 400 V, SILICON, RECTIFIER DIODE PLASTIC, 2 PIN
|
ZETEX PLC
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes, Inc.
|
| OM4215SW OM4216SA/RA/DA OM4203SA/RA/DA OM4215SA/RA |
25A 60V Hi-Rel Schottky Common Cathode Diode in a D3 package
HERMETIC TO-254 SCHOTTKY CENTER-TAP RECTIFIER
25A 100V Hi-Rel Schottky Common Cathode Diode in a D3 package
|
List of Unclassifed Manufacturers
|
| JANSR2N7292 FN4293 |
25 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET 25 A, 100 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| IRFP9150 FN2293 |
25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil Corporation
Samsung semiconductor
|
|
