| PART |
Description |
Maker |
| IRF7665S2PBF IRF7665S2TR1PBF |
Key parameters optimized for Class-D audio amplifier applications
|
International Rectifier
|
| IDP08E65D1 |
High Power RF LDMOS FETs
Temperature stable behaviour of key parameters
|
Infineon Technologies AG
Infineon Technologies A...
|
| 87636-2102 |
1.27mm (.050) Pitch DDR DIMM Socket, Vertical, Black Latch, Single Key, with Beveled Metal Pins, 2.5V Left Voltage Key, 3.23mm (.127) Tail Length
|
Molex Electronics Ltd.
|
| SI7415DN-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7431DPRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| VCO-109 |
Nominal Operating Parameters
|
RF Micro Devices
|
| SI4670DYRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI4684DY-RC |
R-C Thermal Model Parameters
|
Vaishali Semiconductor
|
| SI4378DY_RC |
R-C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI4496DY-RC SI4496DY |
R - C Thermal Model Parameters
|
VISAY[Vishay Siliconix]
|
| SI7401DN-RC |
R-C Thermal Model Parameters 遥控模型参数
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
