| PART |
Description |
Maker |
| AN1232 |
RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES
|
SGS Thomson Microelectronics
|
| TDA9176 |
Luminance Transient Improvement LTI IC
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TDA4670 |
Picture Signal Improvement PSI circuit
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TSU10A60 |
FRD - For Power Factor Improvement High Frequency Rectification
|
NIEC[Nihon Inter Electronics Corporation]
|
| TCU10A30-11A |
FRD - For Power Factor Improvement High Frequency Retification
|
NIEC[Nihon Inter Electronics Corporation]
|
| FCU20A30 |
FRD - For Power Factor Improvement High Frequency Rectification
|
NIEC[Nihon Inter Electronics Corporation]
|
| LC749402BG |
CMOS IC Silicon gate LCD Picture Quality Improvement IC
|
ON Semiconductor
Sanyo Semicon Device
http://
|
| TDA4672 |
Picture Signal Improvement PSI circuit with enhanced peaking function
|
NXP Semiconductors
Philips Semiconductors
|
| TDA9171 |
YUV picture improvement processor based on histogram modification and blue stretch
|
Philips Semiconductors
|
| STH170N8F7-2 |
High avalanche ruggedness
|
STMicroelectronics
|
