PART |
Description |
Maker |
2SC4104 |
High fT. Small reverse transfer capacitance. Adoption of FBET process.
|
TY Semiconductor Co., Ltd
|
2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
2SB1302 SB1302 |
PNP Epitaxial Planar Silicon Transistors Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SC4390 |
Adoption of MBIT process. High DC current gain (hFE=800 to 3200).
|
TY Semiconductor Co., Ltd
|
2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor Bipolar Transistor Adoption of FBET, MBIT processes Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
ELC06D392E ELC06D121E ELC06D562E ELC06D3R3E ELC16B |
Adoption of High -m and High Bm ferrite cores Adoption of High -m and High Bm ferrite cores
|
Panasonic Semiconductor
|
VPH03 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MB85R256G |
256K-bits FRAM LSI using the ferroelectric process and CMOS process technologies
|
http://
|
2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
2SA1905 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS
|
TOSHIBA
|