PART |
Description |
Maker |
MJE172 MJE180 |
SILICON COMPLEMENTRY POWER TRANSISTOR
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Central Semiconductor C...
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1N1206RA 1N1202A 1N1202RA JAN1N1202A 1N1204RA 1N36 |
12A silicon power rectifier, 200V 12A silicon power rectifier, 1000V Military Silicon Power Rectifier 12A silicon power rectifier, 400V 12A silicon power rectifier, 600V 12A silicon power rectifier, 800V
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MICROSEMI[Microsemi Corporation] http://
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BD675 BD679A BD677A BD677 ON0196 BD675A BD679 BD67 |
From old datasheet system 4.0 AMPERE POWER TRANSISTORS Plastic Medium-Power Silicon NPN Darlingtons DARLINGTON POWER TRANSISTORS NPN SILICON
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MOTOROLA[Motorola, Inc] ON Semiconductor Motorola Inc Motorola, Inc.
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1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns) SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
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MICROSEMI[Microsemi Corporation] Microsemi, Corp.
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BUX85_D ON0262 BUX85 |
SITCHMODE NPN Silicon Power Transistors From old datasheet system 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS
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ON Semiconductor Motorola, Inc
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2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
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Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
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NE5531079A-T1 NE5531079A-T1-A NE5531079A-T1A-A |
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS SILICON POWER MOS FET
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California Eastern Labs
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NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A. Receptacle With A Wire Wrap Tail Silicon Power Rectifier Diode / 40 Amp Silicon Power Rectifier Diode 40 Amp NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp 40 A, 300 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
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NTE Electronics, Inc. NTE[NTE Electronics]
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TIP105 TIP100 TIP106 TIP101 TIP102 TIP107 ON2977 |
DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
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BUV20D BUV20 BUV60 BUV20-D |
Power 50A 125V NPN TO204 SWITCHMODE Series NPN Silicon Power Transistor SWITCHMODE Series NPN Silicon Power Transistor SITCHMODE Series NPN Silicon Power Transistor
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ONSEMI[ON Semiconductor]
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MJ802 |
High-Power NPN Silicon Transistor 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS
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Motorola, Inc. ONSEMI[ON Semiconductor]
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