PART |
Description |
Maker |
FDG1024NZ |
Very low level gate drive requirements allowing operation in 3 V circuits (VGS(th) < 1.5 V)
|
TY Semiconductor Co., Ltd
|
FDG6301N |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
TY Semiconductor Co., L...
|
IRLR2705TRL |
Logic-Level Gate Drive
|
International Rectifier
|
IRL1104PBF |
Logic-Level Gate Drive
|
International Rectifier
|
IRL1104S |
Logic-Level Gate Drive
|
International Rectifier
|
IRLR2703TRPBF IRLR2703PBF |
Logic-Level Gate Drive
|
International Rectifier
|
IRL520NL IRL520NS |
Logic-Level Gate Drive
|
International Rectifier
|
IRL1104L 2225 IRL1104S |
Advanced Process Technology Logic-Level Gate Drive From old datasheet system HEXFET? Power MOSFET
|
International Rectifier
|
MSK4227D MSK4227G MSK4227S MSK4227U |
200 VOLT 20 AMP MOSFET H-BRIDGE WITH GATE DRIVE GATE DRIVE
|
M.S. Kennedy Corporation
|
AP2531GY-HF-14 |
Low Gate Charge Drive
|
Advanced Power Electron...
|
AP4434GM |
Low on-resistance, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|