| PART |
Description |
Maker |
| GP801DDS18 |
Dual Switch Low VCE(SAT) IGBT Module 800 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| DIM500GDM33-TS000 DIM500GDM33-TS000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| DIM800DDS12-A000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| GP800DDS18 |
Dual Switch IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| DIM400DDM17-A00009 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| DIM400DDM17-A000 DIM400DDM17-A000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
http://
|
| QIC0610001 |
Dual Common Emitter IGBT Module 100A 600V Per Switch
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| GP1600FSM18 |
Hi-Reliability Single Switch IGBT Module 1600 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| GP1201FSS18 |
Single Switch Low V IGBT Module 1200 A, 1800 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APTGF660U60D4 |
Single Switch - IGBT
Single switch NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| GP400DDM12 |
Dual Switch IGBT Module Advance Information
|
DYNEX[Dynex Semiconductor]
|
