| PART |
Description |
Maker |
| MGTO1000 MGTO1200 |
GATE TURN OFF THYRISTORS
Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMS
|
MOTOROLA[Motorola, Inc]
|
| DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
| DG758BX45 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
| FGC4000BX-90DS FGR4000BX-90DS |
HIGH POWER INVERTER USE PRESS PACK TYPE 大功率逆变器使用的新闻包装
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
Gate communitated turn-off thyristor for high power inverter use press pack type
|
Powerex, Inc.
Mitsubishi Electric Corporation
|
| 5SGA30J4505 |
Asymmetric Gate turn-off Thyristor
|
The ABB Group
|
| DG626BH25 |
2000A, 2500V gate turn-off thyristor
|
Dynex Semiconductor
|
| GCU08BA-130 |
MITSUBISHI GCT (Gate Commutated Turn-off) THYRISTOR UNIT
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FG4000BX-90DA FG4000BX90DA |
1600 A, 4500 V, GATE TURN-OFF SCR
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| FG1000BV-90DA FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type
MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
