| PART |
Description |
Maker |
| MMBZ5235B MMBZ5250B MMBZ5243B MMBZ5252B MMBZ5221B |
Zeners 6.8 V, 0.35 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3-32V Dual Operational Amplifier, Ta = 0 to 70°C; Package: Micro8™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 4000
3.9V, 0.35W Zener Diode
27V, 0.35W Zener Diode
6.8V, 0.35W Zener Diode
33V, 0.35W Zener Diode
13V, 0.35W Zener Diode
9.1V, 0.35W Zener Diode
15V, 0.35W Zener Diode
30V, 0.35W Zener Diode
16V, 0.35W Zener Diode
3.3V, 0.35W Zener Diode
20V, 0.35W Zener Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| TGA2623 TGA2623-15 |
10 to 11GHz 35W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CGH27030S CGH27030S-AMP1 CGH27030S-AMP2 |
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
|
Cree, Inc
|
| QPL1002 QPL1002EVB |
0.03 ?3 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2611 TGA2611-15 |
2 to 6 GHz GaN LNA
|
TriQuint Semiconductor
|
| TGA2623-CP TGA2623-CP-15 |
10 to 11 GHz 32 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CG2H80060D |
60 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| TGA2578-CP TGA2578-CP-15 |
2 to 6 GHz, 30W GaN Power Amplifier
|
TriQuint Semiconductor
|
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
|
