| PART |
Description |
Maker |
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| ASDL-4772-C41 ASDL-4772-C22 |
1.6 mm, 1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
Lite-On Technology, Corp.
AVAGO TECHNOLOGIES LIMITED
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| TLN208 |
LED LAMP GaAlAs INFRARED EMITTER
INFRARED LIGHT - EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Semiconductor
Toshiba Corporation
|
| R878 R87810 L9337 |
High power LED for optical switches
4.2 mm, 1 ELEMENT, INFRARED LED, 870 nm
|
Hamamatsu Corporation
|
