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UT61L256JC-10 - Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM

UT61L256JC-10_8151383.PDF Datasheet
 
Part No. UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256JC-8 UT61L256LS-10 UT61L256LS-12 UT61L256LS-15
Description Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
File Size 152.76K  /  10 Page  

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 Full text search : Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
 Product Description search : Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM

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 SAMSUNG[Samsung semiconductor]
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UT61L256JC-10 Bit UT61L256JC-10 Bipolar UT61L256JC-10 pnp UT61L256JC-10 pitch UT61L256JC-10 Lead forming
 

 

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