
	Part Number	Hot Search : GP8NC60 K3511 RZ12A SCH5000 45984 DG411CUE MS1009 T89C51
	Product Description
	Full Text Search

UT61L256CJC-10 - Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM

UT61L256CJC-10_8151377.PDF Datasheet


Part No.	UT61L256CJC-10 UT61L256CJC-12 UT61L256CJC-15 UT61L256CLS-10 UT61L256CLS-12 UT61L256CLS-15
Description	Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM
File Size	179.36K / 10 Page
Maker	UTRON Technology
Homepage
Download	[ UT61L256CJC-10 UT61L256CJC-12 UT61L256CJC-15 UT61L256CLS-10 UT61L256CLS-12 UT61L256CLS-15 Datasheet PDF Downlaod from IC-ON-LINE.CN ] [ UT61L256CJC-10 UT61L256CJC-12 UT61L256CJC-15 UT61L256CLS-10 UT61L256CLS-12 UT61L256CLS-15 Datasheet PDF Downlaod from Datasheet.HK ] [UT61L256CJC-10 UT61L256CJC-12 UT61L256CJC-15 UT61L256CLS-10 UT61L256CLS-12 UT61L256CLS-15 Datasheet PDF Downlaod from Maxim4U.com ] :-) [ View it Online ] [ Search more for UT61L256CJC-10 ] [ Price & Availability of UT61L256CJC-10 by FindChips.com ]

Full text search : Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM

Product Description search : Access time: 10 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed CMOS SRAM

Related Part Number

PART	Description	Maker
WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120	Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585	White Electronic Designs
AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E	3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time 3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time x16 EDO Page Mode DRAM	Alliance Semiconductor
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic SAMSUNG[Samsung semiconductor]
AS7C1026A-10JC AS7C1026A-15JI AS7C31026A-10TI AS7C	5V 64K x 16 CM0S SRAM , 12ns access time 5V/3.3V 64K X 16 CMOS SRAM 5V 64K x 16 CM0S SRAM , 10ns access time 3.3V 64K x 16 CM0S SRAM , 12ns access time	Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025	3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32 5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32 High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125 Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85 Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85 High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125 High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125 Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85 Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85 5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time 5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time	Alliance Semiconductor ... Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
5962L9960701QUA 5962L9960701QUC 5962L9960701QUX 59	512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 5E4(50krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 3E4(30krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish factory option. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 3E4(30krad)(Si) 512K x 8 SRAM. 20ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM. 25ns access time, 3.3V operation. Lead finish gold. Extended industrial temperature range flow. 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) 512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si)	Aeroflex Circuit Technology
M41T63 M41T64	Serial Access Real-Time Clock with Alarms	ST Microelectronics
M41T81S07 M41T81S	Serial access real-time clock with alarms(带报警的串行存取实时时钟)	意法半导 STMicroelectronics
AS7C3256-12TC AS7C256-12TI AS7C3256-12TI	3.3V 32K x 8 CM0S SRAM (common I/O), 12ns access time 5V 32K x 8 CM0S SRAM (common I/O), 12ns access time	Alliance Semiconductor
5962R-TBD01VTBDA 5962R-TBD01VTBDC 5962R-TBD01VTBDX	256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si).	Aeroflex Circuit Technology
5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q	512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). 16Megabit SRAM MCM 16Megabit的SRAM亿立方米 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). 512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).	Aeroflex Circuit Techno... http:// AEROFLEX[Aeroflex Circuit Technology] Aeroflex Inc. Aeroflex, Inc.

Related keyword From Full Text Search System

UT61L256CJC-10 power	UT61L256CJC-10 micro	UT61L256CJC-10 Product	UT61L256CJC-10 Diode	UT61L256CJC-10 asm encoder
UT61L256CJC-10 type	UT61L256CJC-10 rail	UT61L256CJC-10 tdma modulator	UT61L256CJC-10 pdf	UT61L256CJC-10 Rail

Price & Availability of UT61L256CJC-10

All Rights Reserved © IC-ON-LINE 2003 - 2022

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]

Mirror Sites : [www.datasheet.hk] [www.maxim4u.com] [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com] [www.gdcy.net]

. . . . .

We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy.

X

0.46148991584778