| PART |
Description |
Maker |
| IPW65R041CFD |
extremely low losses due to very low fom rdson qg and eoss
|
Infineon Technologies AG
|
| SPB73N03S2L-08 SPI73N03S2L-08 SPP73N03S2L-08 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 8.4mOhm, 73A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 8.1mOhm, 73A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| PA2011SC-T13 PA2011SC-T7 PA2011DN-T7 PA201111 |
Low RDSON SPDT Analog Switch.
|
Protek Devices
|
| AM3455P |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| AM2370N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
| AM1535CE |
Low rDS(on) provides higher efficiency and extends battery life
|
Analog Power
|
| SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
| KMDF2C03HD |
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
| G3VM-21ER G3VM-21BR |
Higher Power, 4A switching with a 20V load, DIP package. Low 20 mΩ ON Resistance.
|
Omron Electronics LLC
|
