| PART |
Description |
Maker |
| STL11N3LLH6 |
N-channel 30 V, 0.006 typ., 11 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 3.3 x 3.3 package
|
STMicroelectronics
|
| STD70N2LH5 STU70N2LH5 |
N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET
N-channel 25 V, 0.006 ヘ, 48 A - DPAK - IPAK STripFET⑩ V Power MOSFET
N-channel 25 V, 0.006 楼?, 48 A - DPAK - IPAK STripFET垄芒 V Power MOSFET
N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET?/a> V Power MOSFET
|
STMicroelectronics
http://
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| BUK7606-55B BUK7606-55B-15 |
N-channel TrenchMOS standard level FET 75 A, 55 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BUK6E3R4-40C |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
| SUP75N03-04-E3 |
75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| FDS7082N3 |
30V N-Channel PowerTrench MOSFET 17.5 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| BUK9506-30 |
TrenchMOS transistor Logic level FET 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| STF11NM65N STFI11NM65N STD11NM65N STP11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package
N-channel 650 V, 0.425 Ω typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, I2PAKFP and TO-220 packages
N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
|
STMicroelectronics
ST Microelectronics
|
|
