| PART |
Description |
Maker |
| GR24H-2001S GR24H-1003T GR24H-4003T GR24H-5001S GR |
NEUTRAL GROUNDING RESISTORS LOAD BANKS
|
List of Unclassifed Man...
|
| MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks
8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
| NCP45540 |
NCP45540 Datasheet - ecoSWITCH™ Advanced Load Management: 18 A Controlled Load Switch with Low R<sub>ON</sub>
|
ON Semiconductor
|
| AQY221R2SX AQY221R2SZ |
PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA.
|
Matsushita Electric Works(Nais)
|
| AQS610TSX AQS610TSZ |
PhotoMOS relay, GU (general use) type, multi-function (1a1b MOSFET & optocoupler). Output rating load voltage 350V AC/DC, load current 100 mA.
|
Matsushita Electric Works(Nais)
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AQY210KSX AQY210KSZ |
PhotoMOS relay, GU (general use) type. 1-channel(form A) with short circuit protection. AC/DC type. Output rating: load voltage 350 V, load current 120 mA.
|
Matsushita Electric Works(Nais)
|
| AQV414SX |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Picked from the 1/2/3-pin side
|
Matsushita Electric Works(Nais)
|
| HY57V281620HCST-6I HY57V281620HCST-KI HY57V281620H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
