| PART |
Description |
Maker |
| MMBF2201NT1 MMBF2201NT1-D MMBF2201N |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ON Semiconductor
|
| BSS123LT1D BSS123LT3 BSS123LT1-D BSS123LT1/D BSS12 |
Power MOSFET 170 mAmps/ 100 Volts
Power MOSFET 170 mAmps, 100 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| BSS138LT1/D BSS138LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes
|
ON Semiconductor
|
| FMM300-0055P |
Trench Power MOSFET 300 A, 55 V, 0.0036 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
MOSFET Modules
|
IXYS, Corp.
IXYS Corporation
|
|
