| PART |
Description |
Maker |
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP
High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| 2SA1418 2SC3648 2SC3648T 2SA1418T 2SC3648S |
High-Voltage Switching/ Predriver Applications
High-Voltage Switching Predriver Applications
High-Voltage Switching, Predriver Applications
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 700MA I(C) | SOT-89
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 700MA I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五（巴西）总裁| 700mA的一（c）|采用SOT - 89
|
SANYO[Sanyo Semicon Device]
|
| 2SA1400-Z |
High Voltage: VCEO=-400V High speed:tr 1.0ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
| CSC2611 |
1.250W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.100A Ic, 30 - 200 hFE.
HIGH VOLTAGE AMPLIFIER AND TV VIDEO OUTPUT
|
Continental Device India Limited
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| 2SD1821 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| ENN779D |
160V/140mA High-Voltage Switching and AF 100W Predriver Applications
|
Sanyo Semicon Device
|
| 2SA1200 |
High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SC4102 |
High breakdown voltage.(VCEO = 120V)
|
TY Semiconductor Co., Ltd
|
| 2SD1006 |
High collector to emitter voltage: VCEO 100V. Collector-base voltage VCBO 100 V
|
TY Semiconductor Co., Ltd
|
