| PART |
Description |
Maker |
| NE5510179A-T1 NE5510179A |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
|
NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
|
| TA020-040-42-38 |
2.0 ?4.0 GHz 38dBm Amplifiers
|
Transcom, Inc.
|
| TA020-060-40-35 |
2.0 . 6.0 GHz 35dBm Amplifiers
|
Transcom, Inc.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| DG03-166 |
MONOLITHIC AMPLIFIERS 50з BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| CFH77 Q62702-G117 |
GaAs HEMT For low noise front end amplifiers up to 20 GHz
|
INFINEON[Infineon Technologies AG]
|
| BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
|
Siemens
|
| Q62702-F659 BFQ29 BFQ29P |
From old datasheet system
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BFQ82 |
NPN Silicon RF Transistor (For low-noise/ high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
|
Siemens Semiconductor Group
|
| AD8361 AD8361ARM AD8361ARM-REEL AD8361ARM-REEL7 AD |
LF to 2.5 GHz TruPwrDetector SPECIALTY ANALOG CIRCUIT, PDSO6
LF to 2.5 GHz TruPwrDetector 低频.5 GHz TruPwr⑩探测器
LF to 2.5 GHz TruPwr⑩ Detector
LF to 2.5 GHz TruPwr Detector
LF to 2.5 GHz TruPwr?/a> Detector
LF to 2.5 GHz TruPwr?Detector
|
Analog Devices, Inc.
AD[Analog Devices]
|
