PART |
Description |
Maker |
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
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Infineon Technologies AG
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IDP08E65D2 |
High Power RF LDMOS FETs Qualified according to JEDEC for target applications
|
Infineon Technologies AG Infineon Technologies A...
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PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
PTF140451E PTF140451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz
|
Infineon Technologies AG
|
PTFA212001E PTFA212001F |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
|
Infineon Technologies AG
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PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
PTFB211803EL PTFB211803FL |
Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 ?2170 MHz
|
Infineon Technologies AG
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PTFA091201HL PTFA091201GL PTFA091201GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
PTFA091203EL |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
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