| PART |
Description |
Maker |
| IFS75B12N3T4B31 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
| PTFA092213EL-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| IDP08E65D2 |
High Power RF LDMOS FETs Qualified according to JEDEC for target applications
|
Infineon Technologies AG Infineon Technologies A...
|
| PTFA261301E PTFA261301F |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
| PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
| PTFA261702E |
Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 - 2700 MHz
|
Infineon Technologies AG
|
| PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG Infineon Technologies A...
|
| PTFA081501E PTFA081501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz
|
Infineon Technologies AG
|
| PTFA091201HL PTFA091201GL PTFA091201GL09 |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz
|
Infineon Technologies AG
|
| PTFA212401E PTFA212401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ??2170 MHz Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|