PART |
Description |
Maker |
LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米)广角发光二极管 T1 (3mm) WIDE ANGLE LED LAMP T1毫米)广角发光二极管
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BT134-D |
600V Vdrm 4A Triac, 1.7V Peak On-State Voltage, 0.5mA Repetitive Peak Off-State Current Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
2N4166 |
SCR, V(DRM) = 600V TO 699.9V
|
New Jersey Semi-Conductor Products, Inc.
|
2N6174 |
SCR, V(DRM) = 600V TO 699.9V
|
New Jersey Semi-Conductor Products, Inc.
|
Q6004L4V Q6008L5V Q6015L5V Q6004L3V Q6010L5V Q5008 |
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|8A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|15A I(T)RMS|TO-220AB TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB TRIAC|500V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 500V五(DRM)的| 8A条口(T)的有效值| TO - 220AB现有 TRIAC|800V V(DRM)|8A I(T)RMS|TO-220AB 可控硅| 800V的五(DRM)的| 8A条口T)的有效值| TO - 220AB现有 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220AB 可控硅| 400V五(DRM)的| 4A条口(T)的有效值| TO - 220AB现有
|
Teridian Semiconductor, Corp. Littelfuse, Inc.
|
Z86C95-20AEC |
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
|
Microchip Technology, Inc.
|
A29001 A290011T-55 A290011T-70 A290011TL-70 A29001 |
128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory 5015 RR 4#12 SKT RECPT 5015 RR 4#12 PIN RECPT SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes 128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只,引导扇区闪
|
AMIC Technology Corporation AMIC Technology, Corp.
|
DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd. ON Semiconductor
|
BCR16FM12LB BCR16FM-12LB-15 |
Triac 600V - 16A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
BCR8FM12LB BCR8FM-12LB-15 |
Triac 600V - 8A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
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