| PART |
Description |
Maker |
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| M29DW640F70N1 M29DW640F70N1E M29DW640F70N1F M29DW6 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29W640DB90N6E M29W640DT70N1T |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
64 MBIT (8MB X8 OR 4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
ST Microelectronics
|
| M29W640FT60ZA6E M29W640FT60ZA6F M29W640FT70ZA6E M2 |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
STMicroelectronics
|
| WS1M32V-17G3I WS1M32V-17G3IA WS1M32V-20G3I |
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM3.3模块
1Mx32 SRAM 3.3V MODULE 1Mx32 SRAM.3模块
|
Unisonic Technologies Co., Ltd.
Electronic Theatre Controls, Inc.
Microsemi, Corp.
|
| K3P6V2000B-SC |
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| EDI9LC644V EDI9LC644AV2010BC EDI9LC644AV1512BC EDI |
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMB>1Mx32同步动态RAM阵列)
128Kx32 SSRAM/1Mx32 SDRAM Array(3.3V,128x32同步静态RAMMx32同步动态RAM阵列)
SPECIALTY MEMORY CIRCUIT, PBGA153
|
White Electronic Designs Corporation
|
| N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit
512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR]
Unisonic Technologies Co., Ltd.
|
| AM27C4096-15JC |
IC-SM-4MB CMOS PROM 集成电路MB的的CMOS胎膜早破
|
Rochester Electronics, LLC
|
| N08L083WC2C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 8 bit
|
NanoAmp Solutions
|
| N08L163WC1C |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| N08M1618L1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
AMI SEMICONDUCTOR
|
