| PART |
Description |
Maker |
| UPD166011T1J UPD166011T1J-E1-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166024T1K UPD166024T1K-E1-AY UPD166024T1K-E2-AY |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| UPD166101GR20 UPD166100BV UPD166100GR UPD166100GR2 |
N-CHANNEL LOW SIDE INTELLIGENT POWER DEVICE
|
NEC[NEC]
|
| TPD4125K |
Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4102K |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC 东芝智能功率器件单片硅高压功率IC
|
Toshiba, Corp.
Toshiba Semiconductor
|
| TPD1009S E006883 |
THOSHIBA INTELLIGENT POWER DEVICE SILICON MONOLITHIC POWER MOS INTERGRATED CIRCUIT
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| TPD4104AK TPD4104AKLBF |
BRUSHLESS DC MOTOR CONTROLLER, 3 A, PZFM23
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFI9634G |
-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V Rds(on)=1.0ohm Id=-4.1A)
Power MOSFET(Vdss=-250V, Rds(on)=1.0ohm, Id=-4.1A)
|
IRF[International Rectifier]
|
| DLX3416 |
Intelligent Display Device
|
OSRAM GmbH
|
