| PART |
Description |
Maker |
| STL23NM50N |
N-channel 500 V, 0.170 typ., 14 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package
|
STMicroelectronics
|
| SA80 SA51 SA110 SA100 SA43 SA22 SA45A SA150A SA48A |
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors
5.0 thru 170 volts 500 Watts Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
TOOL LONGNOSE ANTI-SHOCK SHEAR
RES 21.5 OHM 1/16W .5% 0603 SMD
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| STD8NM50N STP8NM50N STF8NM50N STU8NM50N |
N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in IPAK
N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh?II Power MOSFET in DPAK, TO-220 and IPAK packages
|
ST Microelectronics
STMicroelectronics
|
| UMA130A UMA120CA UMA12CA UMA11CA UMA120A UMA150A U |
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
ULTRAMITE SURFACE MOUNT 500 Watt Transient Voltage Suppressor 5.0 to 170 V 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
Microsemi, Corp.
|
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| 2SA1256 |
High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ).
|
TY Semiconductor Co., Ltd
|
| SA70A SA15A SA90A SA40A SA150CA SA6.5CA SA5.0CA SA |
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS
55SS Series Series Unipolar Hall-Effect Digital Position Sensor
Ceramic Multilayer Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:1206; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
for 250VAC; UL-60950-1 / CSA C22.2 certified; 5.2kVDC Isolation for 1 Minute; Optional Continuous Short Circuit Protected; 2 Chamber Transformer System
; Capacitance:2200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:1000V; Dielectric Characteristic:X7R; Package/Case:1206; Series:VJ
RES 412 OHM 1/10W .5% 0805 SMD
SENSOR DI-MAG SPEED
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500WATTS TRANSIENT VOLTAGE SUPPRESSOR 5.0 TO 170 VOLTS 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
Electronics Industry Public Company Limited
Micro Commercial Compon...
|
| SA16C SA45 SA70 SA60 SA50 SA51 SA36CA SA6.5A SA10 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 500 Watt Peak Pulse Power)
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 5.0 TO 170 Volts 500 Watt Peak Pulse Power)
|
PanJit Semiconductors
Pan Jit International Inc.
Pan Jit International I...
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| STP45N65M5 STW45N65M5 STB45N65M5 STF45N65M5 |
N-channel 650 V, 0.067 ohm typ., 35 A MDmesh V Power MOSFET
N-channel 650 V, 0.067 typ., 35 A MDmesh V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
|
STMicroelectronics
|
| STU4N62K3 STP4N62K3 STI4N62K3 STF4N62K3 STFI4N62K3 |
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in I2PAK package
N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
|
ST Microelectronics
|
