| PART |
Description |
Maker |
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6514EH NX6514EH-AZ |
1 550 nm InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| ML9XX17 ML9XX17SERIES |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML7XX32 ML792H32-01 ML792E32 ML792E32-01 ML792H32 |
10Gbps InGaAsP DFB LASER DIODE 10Gbps的InGaAsP的DFB激光器二极
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ML9XX43 ML920J43S ML920L43S ML925B43F ML925J43F |
2.5Gbps InGaAsP DFB LASER DIODE 2.5Gbps的InGaAsP的DFB激光器二极
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML99237 ML9XX37 ML9SM37 |
High Power InGaAsP DFB LASER DIODE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX6504SH NX6504SJ NX6504GK NX6504SI NX6504SK NX650 |
1550 nm InGaAsP MQW DFB laser diode for fiber optic communications.
1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs
Renesas Electronics Corporation
|
| NX8316XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NX8315XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NDL7910P NDL7701P NDL7705P NDL7620P |
1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE
|
NEC
|
