| PART |
Description |
Maker |
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| IRF7509PBF IRF7509TRPBF |
Ultra Low On-Resistance
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
Generation V Technology
|
International Rectifier
|
| IRF7507PBF IRF7507TRPBF IRF7507PBF-15 |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
Ultra Low On-Resistance
|
International Rectifier
|
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| NPT2021 NPT2022 NPT2024 NPA1006 |
Next generation high power RF semiconductor technology
|
M/A-COM Technology Solu...
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGB07N120 SGB07N12007 |
Fast IGBT in NPT-technology lower Eoff compared to previous generation
|
Infineon Technologies AG
|
