| PART |
Description |
Maker |
| HN3C51F |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116307 2SA1163 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA116207 2SA1162 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC5376FV |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN2C01FU07 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA187307 |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B04FE |
Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
| 2SA1832 E000567 |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Semiconductor
|
| 2SC537607 2SC5376 |
Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|