| PART |
Description |
Maker |
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五(DRM)的| 50A条口(T)的有效值|08VARM8 TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8 TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
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| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 Transient Voltage Suppressor Diodes 可控硅| 600V的五(DRM)的| 10A条口(T)的有效值|20
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Volex PLC
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| TW5N04FZ TW5N04FZ3 TW5N04FZ1 TW7N04FZ2 TW7N08FZ2 T |
TRIAC|400V V(DRM)|5A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|800V V(DRM)|8A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|25A I(T)RMS|TO-103VARM6 可控硅| 500V五(DRM)的| 25A条口(T)的有效值|03VARM6
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DB Lectro, Inc. Intersil, Corp.
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
| BTA04-800S BTA04-200S BTB04-800S |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|800V V(DRM)|4A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 4A条口(T)的有效值|20
|
STMicroelectronics N.V.
|
| Z0305MG Z0305BG |
TRIAC|200V V(DRM)|3A I(T)RMS|TO-39 3.0 Amp 200-600V Triacs
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TAG Semiconductors
|
| NTE5585 NTE5580 NTE5582 NTE5584 |
Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 1200V. Max RMS on-state current It(rms) = 235A. Silicon Controlled Rectifier for Phase Control Applications Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 600V. Max RMS on-state current It(rms) = 235A.
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NTE[NTE Electronics]
|
| BTB08-200AW |
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20
|
LEM
|
| TRIAC210-40 |
TRIAC|400V V(DRM)|25A I(T)RMS|CHIP 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|芯片
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TE Connectivity, Ltd.
|
| BCR20E8L BCR16A10R BCR16A10L BCR16E10R BCR20B10R B |
TRIAC|400V V(DRM)|20A I(T)RMS|FBASE-R-HW23 TRIAC|500V V(DRM)|16A I(T)RMS|TO-208VAR TRIAC|500V V(DRM)|16A I(T)RMS|FBASE-R-HW23 TRIAC|500V V(DRM)|20A I(T)RMS|FBASE-R-HW23 TRIAC|400V V(DRM)|16A I(T)RMS|FBASE-R-HW23
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