| PART |
Description |
Maker |
| VG3617161ET-8 VG3617161ET-7 |
CMOS Synchronous Dynamic RAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
|
Vanguard International Semiconductor Corporation
Vanguard International Semiconductor, Corp.
|
| GLT5640AL16 GLT5640AL16-10TC GLT5640AL16-5.5TC GLT |
4M X 16 CMOS Synchronous Dynamic RAM
|
ETC[ETC]
|
| VG36644080/1641DTL-8H |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641 |
CMOS Synchronous Dynamic RAM
|
ETC[ETC]
VML[Vanguard International Semiconductor]
|
| VG36646141BT-8 |
CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor
|
| MB85317A-60 |
CMOS 4M?72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M?72浣?????ㄦ?RAM)
|
Fujitsu Limited
|
| VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG361 |
16Mb CMOS Synchronous Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| MK31VT432-10YC |
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??2浣??姝ュ???AM妯″?)
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字32位同步动态RAM模块) 4194304字32位同步动态随机存储器模块BANK）（4分字× 32位同步动态内存模块）
4194304 Word x 32 Bit Synchronous Dynamic RAM Module (1BANK)(4M字2位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| 5216165 |
1,048,576-word ′ 8-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
2,097,152-word ′ 4-bit ′ 2-bank Synchronous Dynamic RAM
(SSTL-3)
From old datasheet system
|
hitachi
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
