| PART |
Description |
Maker |
| DB3X314K DB3X314K0L |
Silicon epitaxial planar type For high speed switching circuits Short reverse recovery time
|
Panasonic Semiconductor
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| XC6223E1219R-G XC6223E121GR-G XC6223E121MR-G XC622 |
Built-in Inrush Current Protection, 300mA High Speed LDO Voltage Regulator
|
Torex Semiconductor
|
| RJK0381DPA RJK0381DPA-00-J5A RJK0381DPA13 |
Built in SBD N Channel Power MOS High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E5DPA-00-J5A RJK03E5DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0236DPA RJK0236DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03E4DPA RJK03E4DPA13 RJK03E4DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N5DPA |
30V, 45A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| TLE6272G |
Communication Supply - High Speed CAN Transceiver with 150mA@5V Voltage Regulator with very low quiescent current, seperated enable/inhibit for VR and transceiver, power on and under-voltage reset, overtemperature and short circuit prote
|
Infineon
|
