| PART |
Description |
Maker |
| MPSA05 |
General Purpose Transistor
EPITAXIAL PLANAR NPN TRANSISTOR (DRIVER STAGE AMPLIFIER, VOLTAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC(Korea Electronics)
|
| KTA1837 |
General Purpose Transistor
TRIPLE DIFFUSED PNP TRANSISTOR(POWER AMPLIFIER DRIVER STAGE AMPLIFIER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SC3906K 2SC4102 2SC2389S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
High-voltage Amplifier Transistor(120V 50mA)
Transistors
TRANSISTOR|BJT|NPN|120VV(BR)CEO|50MAI(C)|SOT-23VAR
High-voltage Amplifier Transistor(120V/ 50mA)
High-voltage Amplifier Transistor(120V, 50mA) 高电压放大器晶体管（120伏特0mA的）
|
Toshiba Semiconductor
ROHM[Rohm]
Rohm Co., Ltd.
|
| BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN
From old datasheet system
CASE 29-04, STYLE 17 TO-2 (TO-226AA)
Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| BD526 BD530 BD528 BD530-5 BD528-5 BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V.
PNP silicon annular amplifier transistor. 10 W, 80 V.
PNP silicon annular amplifier transistor. 10 W, 100 V.
PNP SILICON AMPLIFIER TRANSISTORS 进步党硅晶体管放大器
|
MOTOROLA[Motorola, Inc]
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| 2SC3775 |
NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amplifier Wide-Band Amplifier Applications
|
SANYO
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
