PART |
Description |
Maker |
KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
29C256 AT29C256-15 AT29C256-70TC AT29C256-90PC AT2 |
256K 32K x 8 5-volt Only CMOS Flash Memory High Speed CMOS Logic 8-Bit Shift Register with Input Storage 16-SO -55 to 125 High Speed CMOS Logic 4-by-4 Register File 16-PDIP -55 to 125 High Speed CMOS Logic 4-by-4 Register File 16-SOIC -55 to 125
|
Atmel Corp.
|
AT27C256 AT27C256R AT27C256R-12 AT27C256R-12JC AT2 |
256K 32K x 8 OTP CMOS EPROM 256K (128K x 8) OTP CMOS EPROM High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SOIC -40 to 85 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 120 ns, PDSO28 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32 256K 32K x 8 OTP CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-SO -40 to 85 32K X 8 OTPROM, 70 ns, PDIP28 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TVSOP -40 to 85 High-Speed CMOS Logic Phase-Locked Loop with VCO 16-TSSOP -40 to 85 8-Channel Analog Multiplexer/Demultiplexer 16-SSOP -40 to 85
|
Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation] http://
|
MAX162 MAX162ACNG MAX162ACWG MAX162AING MAX162AMRG |
Complete High-Speed CMOS, 12-Bit ADC " Complete High-Speed CMOS, 12- Bit ADC" JT 3C 3#16 PIN RECP Complete High-Speed CMOS 12-Bit ADC 1-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDIP24 16-Bit Ultra-Low-Power Microcontroller, 16kB OTP, 512B RAM, 92 segment LCD 56-SSOP -40 to 85
|
MAXIM - Dallas Semiconductor http:// MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44 256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns 32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作),在商业和工业温度范围操作 32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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