| PART |
Description |
Maker |
| CM900DUC-24NF |
Mega Power Dual IGBTMOD 900 Amperes/1200 Volts
|
Mitsubishi Electric Semicon...
|
| CM1000DUC-34SA |
Mega Power Dual IGBT 1000 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM100DU-34KA |
Dual IGBTMOD 100 Amperes/1700 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| CM100DY-12H |
Dual IGBTMOD 100 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM400DU-12H |
Dual IGBTMOD 400 Amperes/600 Volts
|
Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
|
| CM800DY-24S |
Powerex Dual IGBTMOD Modules are designed for use in switching applications.
|
Powerex Power Semiconductors
|
| PMEG4005CT |
500 mA low VF dual MEGA Schottky barrier rectifier
500 mA low V_F dual MEGA Schottky barrier rectifier
|
NXP Semiconductors
|
| CM150DY-24E |
DUAL IGBTMOD-TM E-SERIES MODULE 150 AMPERES / 1200 VOLTS
|
Powerex Power Semicondu...
Powerex Power Semiconductors
|
