| PART |
Description |
Maker |
| ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST3401SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STP9527 |
STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST7400 |
ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| TSM2301CXRF |
Advance trench process technology
|
TY Semiconductor Co., Ltd
|
| SSF1116A |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
|
