| PART |
Description |
Maker |
| RFP2N10L RFP2N08L FN2872 |
From old datasheet system
2A/ 80V and 100V/ 1.050 Ohm/ Logic Level/ N-Channel Power MOSFETs
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFP2N10 RFP2N08 |
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conduct...
|
| RFL1P08 RFL1P10 |
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
| RFP2N10L |
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| IRFD9113 IRFD9110 |
(IRFD9110) P Channel Power MOSFET
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
Harris Corporation
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| STQ1NE10L STQ1NE10L-AP |
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFETPOWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET POWER MOSFET
N-CHANNEL 100V - 0.3 ohm - 1A TO-92 STripFET⑩ POWER MOSFET
|
意法半导
STMicroelectronics
ST Microelectronics
|
| IRF9510 FN2214 |
From old datasheet system
3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET
3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET
3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
| HUFA75631P3 HUFA75631S3ST |
33A, 100V, 0.040 Ohm, N-Channel, UltraFETPower MOSFETs
33A/ 100V/ 0.040 Ohm/ N-Channel/ UltraFET Power MOSFETs
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs 33 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| STL22NF10 |
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLATLOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT LOW GATE CHARGE STripFET II MOSFET
N-CHANNEL 100V - 0.055 ohm - 22A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩ II MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HUF75631SK8 |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
|
Fairchild Semiconductor
|
|
