| PART |
Description |
Maker |
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 49A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| AUIRF3710ZSTRL AUIRF3710ZSTRR AUIRF3710Z AUIRF3710 |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
59 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
International Rectifier
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
(IRFR120N / IRFU120N) HEXFET Power MOSFET
HEXFET® Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
| VRF150 VRF15010 VRF150MP |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 15; Gain (dB): 10; VDD (V): 50; Coss (pF): 240; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IRFBA90N20DPBF |
95 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRLU8743PBF IRLR8743PBF |
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRFPS40N50LPBF |
46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-274AA
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
International Rectifier
|
| IRFP340 IRFP340PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A) 功率MOSFET（减振钢板基本\u003d00V，的Rdson）\u003d 0.55ohm，身份证\u003d 11A条）
11 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFIZ34E IRFIZ34EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
|
IRF[International Rectifier]
|
|
