| PART |
Description |
Maker |
| HMC820LP6CE HMC820LP6CE10 |
FRACTIONAL-N SYNTHESIZER w/ INTEGRATED VCO 1095 - 1275, 2190 - 2550, 4380 - 5100 MHz
|
Hittite Microwave Corporation
|
| BCR3KM BCR3KM-12 |
From old datasheet system
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC3928 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)
|
Isahaya Electronics Corporation
|
| CR03AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| INC5001AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type)
|
Isahaya Electronics Corporation
|
| BCR2PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Sem...
|
| BCR3PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3CM |
Low Power Use Non-Insulated Type / Glass Passivation Type
|
Mitsubishi Electric
|
| 2SD1280 |
SILICON NPN EPITAXIAL PLANER TYPE(FOR LOW-VOLTAGE TYPE MEDIUM OUTPUT POWER AMPLIFICATION)
|
Panasonic Semiconductor
|
| SML512BC5T SML512BC5TT86 |
0.8 t=0.55mm Low Current Type
<1.6 0.8 t=0.55mm> Low Current Type
SINGLE COLOR LED
|
Rohm
|
