| PART |
Description |
Maker |
| T1G6000528-Q3 T1G6000528-Q3-EVB3 |
7W, 28V, DC ?6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G4003532-FL-15 T2G4003532-FL-EVB1 T2G4003532-FS |
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T2G6001528-Q3 |
18W, 28V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G2028536-FLEVB1 T1G2028536-FL-15 |
285W, 36V DC ?2 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| MAGX-000035-010000 MAGX-000035-01000S MAGX-000035- |
GaN on SiC HEMT Power Transistor Common-Source configuration
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-001090-600L00 MAGX-001090-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor Common-Source Configuration
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-000912-500L00 MAGX-000912-SB3PPR |
GaN on SiC Depletion-Mode Transistor Technology
|
M/A-COM Technology Solutions, Inc.
|
| NTP8G206N NTP8G206NG |
Power GaN Cascode Transistor
|
ON Semiconductor
|
| TQP0102 |
5 W, DC to 4 GHz, GaN Power Transistor
|
TriQuint Semiconductor
|
