| PART |
Description |
Maker |
| 2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SD191810 |
Power Transistor (160V , 1.5A)
|
Rohm
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| DXT5551P5 DXT5551P5-13 |
160V NPN HIGH VOLTAGE TRANSISTOR PowerDI垄莽5
|
Diodes Incorporated
|
| 2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| CSA916LA |
0.750W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 0.050A Ic, 50 - hFE
|
Continental Device India Limited
|
| CSD669AB |
20.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 60 - 120 hFE.
|
Continental Device India Limited
|
| CD2383Y |
0.700W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 160 - 320 hFE
|
Continental Device India Limited
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| CSC2238Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSA968Y
|
Continental Device India Limited
|
| CSA1220AO CSA1220AY CSA1220AR |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.2A I(C) | TO-126 晶体管|晶体管|进步党| 160V五(巴西)总裁| 1.2AI(丙)|26
|
Electronic Theatre Controls, Inc.
|