| PART |
Description |
Maker |
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| 2SK2211 |
Low ON-resistance RDS(ON) High-speed switching Drain to source voltage VDSS 30 V
|
TY Semiconductor Co., Ltd
|
| STF26NM60N-H |
Low gate input resistance
|
意法半导
STMicroelectronics
|
| AP9924GO |
Low on-resistance, Capable of 2.5V gate drive
|
Advanced Power Electronics Corp.
|
| 2SK3112 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 110m MAX.
|
TY Semiconductor Co., Ltd
|
| 2SK3794 |
Low On-state resistance RDS(on)1 = 44 m MAX. Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
| KI4558DY |
PIN Configuration Drain-Source Voltage Vds 30V Gate-Source Voltage Vgs -20V
|
TY Semiconductor Co., Ltd
|
| KF4N80F |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
MORNSUN Science& Technology Ltd.
|
| ST7MDT2 ST7MDT2-110 ST7MDT2-220 ST7MDT2-DVP ST7MDT |
A Low-Cost Development Package Including A Full Real-Time Emulation Board(低价格开发软件包)
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:51A; On-Resistance, Rds(on):0.36ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Drain-Source Breakdown Voltage:30V
From old datasheet system
MDT2-DVP LOW COST ST7 DEVELOPMENT KIT DATASHEET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| KPA1750 |
Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance
|
TY Semiconductor Co., Ltd
|
| 2SK3511 |
Super low on-state resistance: RDS(on) = 12.5 m MAX Built-in gate protection diode
|
TY Semiconductor Co., Ltd
|
