| PART |
Description |
Maker |
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| STPSC1206 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| STPSC606 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| MSICSN10060 MSICSS10060 MSICST10060 |
SILICON CARBIDE SCHOTTKY POWER RECTIFIER
|
Microsemi Corporation
|
| GB10SLT12-252 GB10SLT12-252-18 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| CDBJFSC10650-G |
Silicon Carbide Power Schottky Diode
|
Comchip Technology
|
| CDBJSC3650-G |
Silicon Carbide Power Schottky Diode
|
Comchip Technology
|
| CDBJSC101700-G |
Silicon Carbide Power Schottky Diode
|
Comchip Technology
|
| GC08MPS12-220 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GC05MPS12-220 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
| GC10MPS12-220 |
Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
