| PART |
Description |
Maker |
| TST0911 |
Dualband SiGe-Power Amplifier for GSM 900/1800/1900
From old datasheet system
|
Atmel
|
| M600FXM18 DFM900FXM18 |
600 A, 1800 V, SILICON, RECTIFIER DIODE
900 A, 1800 V, SILICON, RECTIFIER DIODE
|
DYNEX SEMICONDUCTOR LTD
|
| BGA735N16 |
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)
High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)
|
Infineon Technologies AG
Infineon Technologies A...
|
| PC29090100A |
Cellular 850/900/1800/1900 & UMTS/WCDMA(3G) 2100 MHz 80mm*30mm PCB Antenna
|
List of Unclassifed Man...
|
| TMP93CS45 TMP93CS44 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW20A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW44A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TA1240A |
SAW Filter 1900MHz
|
TAI-SAW TECHNOLOGY CO.,...
|
| PE-65378 PE-36005W PE-65575 PE-68975 PE-65495 PE-6 |
*Transformer Selection Guide for Siemens Telecom ICs - (5/96) *变压器西门子电信IC选择指南- 5 / 96
*Transformer Selection Guide for Siemens Telecom ICs - (5/96) *变压器西门子电信IC选择指南- / 96
|
Advanced Interconnections, Corp.
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
