| PART |
Description |
Maker |
| V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V54C3256164VAT V54C3256164VBT V54C3256404VB V54C32 |
256Mbit SDRAM 3.3 VOLT/ TSOP II / SOC BGA / WBGA PACKAGE 16M X 16/ 32M X 8/ 64M X 4
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4 |
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Electronic Theatre Controls, Inc.
|
| K4D26323QG K4D26323QG-GC33 K4D26323QG-GC25 K4D2632 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
| K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N2632 |
128Mbit GDDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| HY57V281620HCT-HI HY57V281620HCLT-8I |
SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
From old datasheet system
SDRAM,4X2MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
| K4S640832 K4S640832F K4S640832F-TL75 K4S640832F-TC |
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC 0 to 70
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronics Inc
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
