| PART |
Description |
Maker |
| SI1902DL-E3 |
660 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| QLF063D-P120 |
660 nm 120mW FP LASER TO-CAN
|
QD Laser
|
| QLF063D |
660 nm 100mW FP LASER TO-CAN
|
QD Laser
|
| SFH462 |
4.19 mm, 1 ELEMENT, INFRARED LED, 660 nm
|
Infineon Technologies AG
|
| S48D95 |
Single Output to 660 Vac AC/DC Control
|
Teledyne Technologies I...
|
| OIS-170660 OIS-170660-X-T OIS-170670-X-T OIS-17069 |
Series 170 - 0805 Standard IR high intensity 660-850 nm
|
OSA Opto Light GmbH
|
| HMC616LP3 HMC616LP3E 616LP3E |
GaAs SMT PHEMT LOW NOISE AMPLIFIER, 175 - 660 MHz
|
Hittite Microwave Corporation
|
| APTR3216SRCPRV |
3.2 x 1.6 mm SMD chip LED lamp. Super bright red (peak wavelength 660 nm). Lens type water clear.
|
Kingbright Electronic
|
| ISL8105ACBZ-T |
SWITCHING CONTROLLER, 660 kHz SWITCHING FREQ-MAX, PDSO8
|
INTERSIL CORP
|
| XDMR14C4-A |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 8000 Iv(ucd) If@10mA Typ.= 23990
|
SunLED Company Limited
|
| XDMR25C-1 |
Material (Color) = Gaalas (Red) Lens = Peak Wave Length = 660 Iv(ucd) If@10mA Min.= 18000 Iv(ucd) If@10mA Typ.= 59990
|
SunLED Company Limited
|
