PART |
Description |
Maker |
UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
3SK135A 3SK135A-T1 3SK135A-KS 3SK135A-T2 |
For UHF TV tuner high frequency amplification RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
NEC
|
BFS481E6327 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
SIEMENS A G
|
MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
MCH6001 |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS) VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SC4320 E000939 |
From old datasheet system VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC5702 2SC5702ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR MODIFIED SC-89, MFPAK-3 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Renesas Electronics Corporation
|
BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF power LDMOS transistor
|
Philips Semiconductors NXP Semiconductors
|