| PART |
Description |
Maker |
| ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
| MAGX-000040-00500P-15 MAGX-000040-00500P-V2 |
GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solu...
|
| MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
| MAGX-002735-SB0PPR MAGX-002735-040L00 |
GaN HEMT Pulsed Power Transistor 2.7 - 3.5 GHz, 40W Peak, 300us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MAGX-003135-SB1PPR AGX-003135-030L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 30W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc.
|
| ECE-V1HA101UP RF3932SQ EEV-TG2A101M ERJ-8GEYJ100V |
60W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| MAGX-001214-250L00 MAGX-001214-SB1PPR MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MRF6V2010N |
Designed primarily for pulsed wideband large - signal output and driver
|
Motorola Semiconductor Products
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| MAGX-011086-SMBPPR |
GaN Wideband Transistor 28 V, 4 W
|
M/A-COM Technology Solu...
|
| 2N334 2N335 2N334A 2N335/1299 |
Trans GP BJT NPN 3-Pin TO-5
Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2
Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2
|
New Jersey Semiconductor
|
| MRF6522-60 MRF6522-70 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04
Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600
|
New Jersey Semiconductors
|
