| PART |
Description |
Maker |
| EIA1213-4P EIB1213-4P |
12.75-13.25GHz, 4W internally matched power FET
|
Excelics Semiconductor
|
| CFOI025050CE122 CFOI025050CE111 CFOI025050CE113 CF |
25GHz Compact Fiber Optical Interleaver
Green 25GHz Compact Fiber Optical Interleaver
|
OPLINK Communications Inc.
OPLINK Communications I...
|
| MGFS45V2123A |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHD GaAs FET
2.1-2.3 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CAT93C56JA CAT93C56JE CAT93C56JI CAT93C56KA CAT93C |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K-Bit Microwire Serial EEPROM
|
Samsung Semiconductor Co., Ltd.
Macronix International Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
Microchip Technology, Inc.
Rohm Co., Ltd.
Vicor, Corp.
CATALYST[Catalyst Semiconductor]
http://
|
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFK25V4045 K254045 |
14.0-14.5GHz BAND 0.3W INTERNALLY MATCHED GaAs FET
From old datasheet system
14.0~14.5GHZ BAND 0.3W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC44V5964 C445964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123 S452123 |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 28C64AT/P 28C64ATI/L 28C64AFTI/SO 28C64AFI/SO 28C6 |
64K (8K x 8) CMOS EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
