| PART |
Description |
Maker |
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| 1N1199ASERIES 1N3670ASERIES 1N1203A 1N1202A 1N3673 |
50V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
12 AMP MEDIUM POWER SILICON RECTIFIER DIODES
13 AM MEDIUM POWER SILICON RECTIFIER DIODES
12 AM MEDIUM POWER SILICON RECTIFIER DIODES
400V 12A Std. Recovery Diode in a DO-203AA (DO-4)package
|
IRF[International Rectifier]
|
| 2SD1664 2SD1858 A5800362 2SD1664P 2SD1664T100Q 2SD |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
Medium Power Transistor (32V/ 1A)
Medium Power Transistor (32V, 1A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Littelfuse
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2N3110 2N3107 2N3109 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES NPN硅自动对焦中功率功放
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES
|
International Rectifier, Corp.
MICRO-ELECTRONICS[Micro Electronics]
|
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
http://
ONSEMI[ON Semiconductor]
|
| NTE196 NTE197 |
Silicon Complementary Transistors Audio Power Output and Medium Power Switching
|
NTE[NTE Electronics]
|
| 2SC5720 |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS 介质功率放大器应STOROBO Flash应用
|
Toshiba Corporation
Toshiba, Corp.
|
| 2N4233A |
MEDIUM-POWER SILICON TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2N3507A 2N3507AL 2N3507L 2N3506AL |
NPN MEDIUM POWER SILICON TRANSISTOR
|
Microsemi Corporation
|
| MJ4030 MJ4031 MJ4032 MJ4033 MJ4034 |
MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS
|
Comset Semiconductor
|
